Gettering and Defect Engineering in Semiconductor Technology XVI

Collection of selected, peer reviewed papers from the

GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany.

The 7
1
papers are grouped as follows:

Chapter 1: Growth of Mono- and Multi-Crystalline Silicon;

Chapter 2: Passivation and Defect Studies in Solar Cells;

Chapter 3: Intrinsic Point Defects and Dislocations in Silicon;

Chapter 4: Light Elements in Silicon-Based Materials;

Chapter 5: Properties and Gettering of Transition Metals in Silicon;

Chapter 6: Radiation- and Impurity-Related Defect Studies in Silicon and Germanium;

Chapter 7: Thermal Properties of Semiconductors;

Chapter 8: Luminescence and Optical Properties of Semiconductors; Chapter 9: Nano-Sized Layers and Structures; Chapter 10: Wide-Bandgap Semiconductors; Chapter 11: Advanced Methods and Tools for Investigation of Semiconductor Materials