Diffusion in Semiconductors
C.E. Allen (author of contributions), D.L. Beke (author of contributions), H. Bracht (author of contributions), C.M. Bruff (author of contributions), M.B. Dutt (author of contributions), G. Erdelyi (author of contributions), P. Gas (author of contributions), F.M. d'Heurle (author of contributions), G.E. Murch (author of contributions), E.G. Seebauer (author of contributions), B.L. Sharma (author of contributions), N.A. Stolwijk (author of contributions)
Published on: 18/03/1998
Price: £2,697
Synopsis
This text consists of a comprehensive and critical compilation of data for the following materials and properties: diffusion in silicon, germanium and their alloys; diffusion in compound semiconductors; diffusion in silicides; chemical diffusion in bulk inhomogeneous semiconductors; grain-boundary and dislocation diffusion in semiconductors and silicides; and surface diffusion on semiconductors. Although most of the silicides are not semiconducting, this chapter is included because a number of them have become integrated in the Si technology and because they have not been treated in previous volumes.
Publisher information
- Publisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
- ISBN: 9783540609643
- Number of pages: 476
- Dimensions: 270 x 193 mm
- Languages: English